vishay il755/ ILD755 document number 83641 rev. 1.3, 22-apr-04 vishay semiconductors www.vishay.com 1 i179037 b c e nc a/c c/a 1 2 3 6 5 4 single channel dual channel e c c e a a 1 2 3 4 5 6 7 8 c c optocoupler, photodarlington output, ac input, high gain (single, dual channel) features ? ac or polarity insensitive inputs built-in reverse polarity input protection industry standard dip package agency approvals ul file #e52744 system code h or j csa 93751 bsi iec60950 iec60965 din en 60747-5-2(vde0884) din en 60747-5-5 pending available with option 1 applications designed for applications requiring detection or mon- itoring of ac signals. description the il755/ ILD755 are bidirectional input optically coupled isolators. they consist of two gallium ars- enide infrared emitting diodes coupled to a silicon npn photodarlington per channel. the il755 is single channel darlington optocouplers. the ILD755 has two isolated channels in a single dip package. order information for additional information on the available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause per manent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input part remarks il755-1 ctr > 750 %, dip-8 il755-2 ctr > 1000 %, dip-8 ILD755-1 ctr > 750 %, dip-8 ILD755-2 ctr > 1000 %, dip-8 il755-1-x007 ctr > 750 %, smd-8 (option 7) parameter test condition symbol value unit forward continuous current i f 60 ma power dissipation p diss 100 mw derate linearly from 25 c 1.33 mw/c
www.vishay.com 2 document number 83641 rev. 1.3, 22-apr-04 vishay il755/ ILD755 vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output parameter test condition part symbol value unit collector-emitter breakdown voltage bv ceo 60 v collector-base breakdown voltage bv cbo 60 v power dissipation il755-1 p diss 200 mw il755-2 p diss 200 mw ILD755-1 p diss 150 mw ILD755-2 p diss 150 mw derate linearly from 25 c il755-1 2.6 mw/c il755-2 2.6 mw/c ILD755-1 2.0 mw/c ILD755-2 2.0 mw/c parameter test condition part symbol value unit isolation test voltage (pk) t = 1.0 sec. v iso 7500/5300 vac pk /v rms total power dissipation (led plus detector) il755-1 p tot 250 mw il755-2 p tot 250 mw ILD755-1 p tot 400 mw ILD755-2 p tot 400 mw derate linearly from 25 c il755-1 3.0 mw/c il755-2 3.0 mw/c ILD755-1 3.0 mw/c ILD755-2 3.0 mw/c creepage 7mm clearance 7mm storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c lead soldering time at 260 c 10 sec. parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.2 1.5 v parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 1.0 ma bv ceo 60 75 v collector-base breakdown voltage i c = 10 abv cbo 60 90 v collector-emitter leakage current v ce = 10 v i ceo 10 100 na
vishay il755/ ILD755 document number 83641 rev. 1.3, 22-apr-04 vishay semiconductors www.vishay.com 3 coupler current transfer ratio switching characteristics typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit collector-emitter saturation voltage i f = 10 ma, i c = 10 ma v ce(sat) 1.0 v parameter test condition part symbol min ty p. max unit current transfer ratio v ce = 5.0 v, i f = 2.0 ma il755-1 ctr 750 % ILD755-1 ctr 750 % v ce = 5.0 v, i f = 1.0 ma il755-2 ctr 1000 % ILD755-2 ctr 1000 % parameter test condition part symbol min ty p. max unit rise time v cc = 10 v, i f = 2.0 ma, r l = 100 ? il755-1 t r 50 s ILD755-1 t r 50 s fall time v cc = 10 v, i f = 2.0 ma, r l = 100 ? il755-1 t f 50 s ILD755-1 t f 50 s rise time v cc = 10 v, i f = 1.0 ma, r l = 100 ? il755-2 t r 70 s ILD755-2 t r 70 s fall time v cc = 10 v, i f = 1.0 ma, r l = 100 ? il755-2 t f 70 s ILD755-2 t f 70 s fig. 1 led forward current vs.forward voltage iil755_01 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 60 40 20 0 -20 -40 -60 ?55c v f - led forward voltage - v i f - led forward current - ma 85c 25c fig. 2 normalized non-saturated and saturated ctr ce vs. led current iil755_02 .1 1 10 100 if - led current - ma nctrce - normalized ctrce 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 vce=1v vce=5v normalized to: vce=5v if = 1 ma
www.vishay.com 4 document number 83641 rev. 1.3, 22-apr-04 vishay il755/ ILD755 vishay semiconductors fig. 3 normalized non-saturated and saturated ctr ce vs. led current fig. 4 normalized non-saturated and saturated i ce vs. led current fig. 5 normalized non-saturated and saturated collector-emitter current vs. led current iil755_03 100 10 1 .1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 vce=1v vce=5v if - led current - ma nctrce - normalized ctrce normalized to: vce=5v if = 2 ma iil755_04 100 1 .1 .01 .1 1 10 100 vce=1v vce=5v if - led current - ma nice - normalized ice if = 2 ma vce = 5 v normalized to: 10 iil755_05 100 1 .1 .001 .01 .1 1 10 vce=1v vce=5v if - led current - ma nice - normalized ice if = 10 ma vce=5v normalized to: 10 fig. 6 non-saturated and saturated hfe vs. base current fig. 7 low to high propagation delay vs. collector load resistance and led current fig. 8 high to low propagation delay vs. collector load resistance and led current iil755_06 .01 .1 1 10 100 0 2000 4000 6000 8000 10000 vce = 5 v vce=1v ib - base current - a hfe - forward transfer gain iil755_07 0 5 10 15 20 0 20 40 60 80 vcc = 5v vth = 1.5 v 220 ? ? 470 ? if - led current - ma tplh - low/high propagation delay - s 100 ? 1.0 k ? ? 1k ? if - led current - ma tphl - high/low propagation delay - s vcc = 5 v vth = 1.5 v
vishay il755/ ILD755 document number 83641 rev. 1.3, 22-apr-04 vishay semiconductors www.vishay.com 5 package dimensions in inches (mm) fig. 9 switching waveform iil755_09 i f t r v o t d t s t f t phl t plh v th =1.5 v fig. 10 normalized non-saturated and saturated ctr ce vs. led current iil755_10 i f =1 ma v o v cc =10 v r l f=10 khz, df=50% i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3?9 .300?.347 (7.62?8.81) 4 typ. iso method a
www.vishay.com 6 document number 83641 rev. 1.3, 22-apr-04 vishay il755/ ILD755 vishay semiconductors package dimensions in inches (mm) i178006 pin one id .255 (6.48) .268 (6.81) .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .100 (2.54) typ. 10 3?9 .300 (7.62) typ. .018 (.46) .022 (.56) .008 (.20) .012 (.30) .110 (2.79) .130 (3.30) .130 (3.30) .150 (3.81) .020 (.51 ) .035 (.89 ) .230(5.84) .250(6.35) 4 3 2 1 .031 (0.79) .050 (1.27) 5 6 78 iso method a .315 (8.0) min. .255 (6.5) .248 (6.3) .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18447
vishay il755/ ILD755 document number 83641 rev. 1.3, 22-apr-04 vishay semiconductors www.vishay.com 7 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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